GE Aviation receives US Army contract for silicon carbide development

GE Aviation has received a contract to research silicon carbide-based power electronics in US Army ground vehicles.

‘GE continues to invest in electric power technologies and specifically in silicon carbide which enables significant improvements in size, weight and power,’ said Vic Bonneau, president of Electrical Power Systems for GE Aviation. ‘Our electric power team has successfully demonstrated various types of power conversion products that have led to high temperature applications of silicon carbide technology.’

The US$3.4 million contract consists of an 18 month development program that will demonstrate the benefits of GE’s silicon carbide MOSFET technology in a 35 kW main engine cooling fan controller and a 3kW coolant pump controller. The hardware will be more efficient than present day silicon based systems and will allow better management of the vehicle’s available on-board power, GE says.

This story uses material from GE Aviation, with editorial changes made by Materials Today. The views expressed in this article do not necessarily represent those of Elsevier.